symbol v ds v gs i dm t j , t stg symbol typ max 32 42 65 100 r q jl 25 35 junction and storage temperature range a p d c 3.0 1.9 -55 to 150 t a =70c i d 10 7.8 30 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage 30 r q ja c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s 30v n-channel mosfet features v ds (v) = 30v i d = 10a (v gs = 10v) r ds(on) < 15m w (v gs = 10v) r ds(on) < 24m w (v gs = 4.5v) the AON3406 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in p wm applications. the source leads are separated to all ow a kelvin connection to the source, which may be used to bypass the source inductance. g d s top view 1 2 3 4 8 7 6 5 AON3406 general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 30 v 0.003 1 t j =55c 5 i gss 100 na v gs(th) 1.4 1.75 3 v i d(on) 30 a 12 15 t j =125c 18 22 18 24 m w g fs 30 s v sd 0.73 1 v i s 4 a c iss 955 1200 pf c oss 145 pf c rss 112 pf r g 0.5 0.85 w q g (10v) 17 24 nc q g (4.5v) 9 12 nc q gs 3.4 nc q gd 4.7 nc t d(on) 5 6.5 ns t r 6 7.5 ns t d(off) 19 25 ns t f 4.5 6 ns t rr 19 21 ns q rr 9 12 nc maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =10a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.5 w , r gen =3 w turn-off fall time total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m w v gs =4.5v, i d =9a i s =1a,v gs =0v v ds =5v, i d =10a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =10a reverse transfer capacitance i f =10a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2 : nov 2009 30v n-channel mosfet AON3406 www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 800 140 220 80 140 0.5 15 7 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 5v 0 4 8 12 16 20 24 28 32 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 16 18 20 22 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =10a v gs =4.5v i d =9a 10 20 30 40 50 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) i d =10a 25c 125c v ds =5v v gs =4.5v v gs =10v 25c 125c 30v n-channel mosfet AON3406 www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics 800 140 220 80 140 0.5 15 7 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss v ds =15v i d =10a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =42c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 10s dc r ds(on) limited t j(max) =150c t a =25c 100 m s 100ms 30v n-channel mosfet AON3406 www.freescale.net.cn 4 / 4
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